The role of outdiffusion in the activation of high dose Mg implantations in InP
Identifieur interne : 000295 ( Main/Exploration ); précédent : 000294; suivant : 000296The role of outdiffusion in the activation of high dose Mg implantations in InP
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Abstract
We have studied the annealing behaviour of magnesium implanted in indium phosphide. The activated fraction of dopants was found to depend strongly on implanted dose and substrate temperature during implantation. Low activation for high dose (1015 cm−2) implantations was found to be a result of pronounced outdiffusion (80%). We also found a large variation in the apparent activation energy for implantation temperatures between room temperature and 300° C.
DOI: 10.1007/BF02660407
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<record><TEI><teiHeader><fileDesc><titleStmt><title>The role of outdiffusion in the activation of high dose Mg implantations in InP</title><author><name>W. H. Van Berlo</name><affiliation wicri:level="1"><mods:affiliation>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden</mods:affiliation><country xml:lang="fr">Suède</country><wicri:regionArea>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista</wicri:regionArea><wicri:noRegion>Kista</wicri:noRegion></affiliation></author><author><name>M. Ghaffari</name><affiliation wicri:level="1"><mods:affiliation>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden</mods:affiliation><country xml:lang="fr">Suède</country><wicri:regionArea>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista</wicri:regionArea><wicri:noRegion>Kista</wicri:noRegion></affiliation></author><author><name>G. Landgren</name><affiliation wicri:level="1"><mods:affiliation>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden</mods:affiliation><country xml:lang="fr">Suède</country><wicri:regionArea>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista</wicri:regionArea><wicri:noRegion>Kista</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1992_Article_BF02660407.pdf</idno><date when="1992">1992</date><idno type="doi">10.1007/BF02660407</idno><idno type="wicri:Area/Main/Corpus">000983</idno><idno type="wicri:Area/Main/Curation">000983</idno><idno type="wicri:Area/Main/Exploration">000295</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anneal</term><term>Implantation</term><term>InP</term><term>P-type doping</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">We have studied the annealing behaviour of magnesium implanted in indium phosphide. The activated fraction of dopants was found to depend strongly on implanted dose and substrate temperature during implantation. Low activation for high dose (1015 cm−2) implantations was found to be a result of pronounced outdiffusion (80%). We also found a large variation in the apparent activation energy for implantation temperatures between room temperature and 300° C.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="abfbfcafc9093c8353d32320610df45097ad6f1f"><titleInfo lang="eng"><title>The role of outdiffusion in the activation of high dose Mg implantations in InP</title></titleInfo><name type="personal"><namePart type="given">W. H.</namePart><namePart type="family">Van Berlo</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Ghaffari</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden</affiliation></name><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Landgren</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1991-11-07</dateCreated><dateValid encoding="w3cdtf">2007-06-24</dateValid><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">We have studied the annealing behaviour of magnesium implanted in indium phosphide. The activated fraction of dopants was found to depend strongly on implanted dose and substrate temperature during implantation. Low activation for high dose (1015 cm−2) implantations was found to be a result of pronounced outdiffusion (80%). We also found a large variation in the apparent activation energy for implantation temperatures between room temperature and 300° C.</abstract><subject lang="eng"><genre>Key words</genre><topic>InP</topic><topic>Implantation</topic><topic>p-type doping</topic><topic>Anneal</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1992</partNumber><partNumber>Volume: 21</partNumber><partNumber>Number: 4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1992-04-01</dateIssued><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 13</identifier><recordInfo><recordOrigin>The Mineral,Metal & Materials Society,Inc., 1992</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02660407</identifier><identifier type="matrixNumber">Art6</identifier><identifier type="local">BF02660407</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>431</start><end>435</end></extent></part><recordInfo><recordOrigin>TMS, 1992</recordOrigin><recordIdentifier>11664_1992_Article_BF02660407.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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